Morphology control of epitaxial monolayer transition metal dichalcogenides

Volume: 4, Issue: 1, Pages: 014003
Published: Jan 15, 2020
Abstract
To advance fundamental understanding and ultimate application of transition-metal dichalcogenide (TMD) monolayers, it is essential to develop capabilities for the synthesis of high-quality single-layer samples. Molecular beam epitaxy (MBE), a leading technique for the fabrication of the highest-quality epitaxial films of conventional semiconductors has, however, typically yielded only small grain sizes and suboptimal morphologies when applied to...
Paper Details
Title
Morphology control of epitaxial monolayer transition metal dichalcogenides
Published Date
Jan 15, 2020
Volume
4
Issue
1
Pages
014003
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