Modeling and simulation of temporal and temperature drift for the development of an accurate ISFET SPICE macromodel

Volume: 19, Issue: 1, Pages: 367 - 386
Published: Jan 4, 2020
Abstract
Modeling of non-idealities in ion-sensitive field-effect transistors (ISFET) is crucial for obtaining precise pH-sensing characteristics. This paper presents an accurate Simulation Program with Integrated Circuit Emphasis (SPICE) macromodel of a $\hbox {Si}_{3}\hbox {N}_{4}–gate ISFET pH sensor which takes into account the temperature and temporal drift. The robust model includes surface site densities of both the silanol and primary amine...
Paper Details
Title
Modeling and simulation of temporal and temperature drift for the development of an accurate ISFET SPICE macromodel
Published Date
Jan 4, 2020
Volume
19
Issue
1
Pages
367 - 386
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