Electron Transport across Vertical Silicon / MoS${_2}$ / Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene-Base Hot Electron Transistors
Abstract
Heterostructures comprising of silicon (Si), molybdenum disulfide (MoS{_2} and graphene are investigated with respect to the vertical current conduction mechanism. The measured current-voltage (I-V) characteristics exhibit temperature dependent asymmetric current, indicating thermally activated charge carrier transport. The data is compared and fitted to a current transport model that confirms thermionic emission as the responsible transport...
Paper Details
Title
Electron Transport across Vertical Silicon / MoS${_2}$ / Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene-Base Hot Electron Transistors
Published Date
Dec 23, 2019
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