Design and analysis of high electron mobility transistor (HEMT) inspired III-V electro-optic modulator topologies.
Abstract
III-V heterostructure based high electron mobility transistors (HEMTs) offer superior performance as compared to CMOS silicon transistors owing to the high mobility in the 2D electron gas (2DEG) channel at the heterostructure interface. Gallium nitride (GaN) based HEMTs are also suitable for high power and high temperature applications. GaN has a rich offering of material properties spanning domains of nonlinear optics, piezoelectric...
Paper Details
Title
Design and analysis of high electron mobility transistor (HEMT) inspired III-V electro-optic modulator topologies.
Published Date
Jul 16, 2019
Journal
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