Structural, dielectric and electrical properties of bismuth magnesium tantalate electronic system

Volume: 7, Issue: 4, Pages: 628 - 636
Published: Dec 1, 2019
Abstract
The lead-free dielectric compound Bi(Mg2/3Ta1/3)O3 (BMT) has been synthesized at high temperature by a low-cost solid-state method. The X-ray diffraction (XRD) technique reveals that the fabricated sample has an orthorhombic crystal system. The scanning electron microscope (SEM) image displays the uniform distribution of grains on the surface of the specimen. The dielectric parameters (permittivity (εr), and loss tangent (tan δ) are studied over...
Paper Details
Title
Structural, dielectric and electrical properties of bismuth magnesium tantalate electronic system
Published Date
Dec 1, 2019
Volume
7
Issue
4
Pages
628 - 636
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