N/S dual-doped graphene with high defect density for enhanced supercapacitor properties

N/S dual-doped graphene was prepared by one-pot process using graphene oxide as raw material and thiourea and urea as reduction-dopants. The field emission scanning electron microscopy (FESEM), X-ray powder diffraction (XRD), Raman spectroscopy (Raman), nuclear magnetic resonance (NMR) spectroscopy, X-ray photoelectron spectroscopy (XPS), and other means were used to characterize the microstructure and morphology of the samples. The...