Polarizability of germanium quantum dots with spatially separated electrons and holes in Ge/Si heterostructures

In the framework of dipole approximation, it is shown that the quantities (the oscillator strengths of transitions, the dipole moments for transitions, and the polarizability) describing optical absorption on surface exciton states with spatially separated electrons and holes (the hole moves in the germanium quantum dot and the electron is localised over the spherical interface of the silicon quantum dot matrix) assume giant values considerably...