Divalent europium-doped near-infrared-emitting phosphor for light-emitting diodes

Volume: 10, Issue: 1, Pages: 5267 - 5267
Published: Nov 20, 2019
Abstract
Near-infrared luminescent materials exhibit unique photophysical properties that make them crucial components in photonic, optoelectronic and biological applications. As broadband near infrared phosphors activated by transition metal elements are already widely reported, there is a challenge for next-generation materials discovery by introducing rare earth activators with 4f-5d transition. Here, we report an unprecedented phosphor K3LuSi2O7:Eu2+...
Paper Details
Title
Divalent europium-doped near-infrared-emitting phosphor for light-emitting diodes
Published Date
Nov 20, 2019
Volume
10
Issue
1
Pages
5267 - 5267
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