Effects of Zn2+ and Ga3+ doping on the quantum yield of cluster-derived InP quantum dots

Volume: 151, Issue: 19
Published: Nov 19, 2019
Abstract
As the commercial display market grows, the demand for low-toxicity, highly emissive, and size-tunable semiconducting nanoparticles has increased. Indium phosphide quantum dots represent a promising solution to these challenges; unfortunately, they typically suffer from low inherent emissivity resulting from charge carrier trapping. Strategies to improve the emissive characteristics of indium phosphide often involve zinc incorporation into or...
Paper Details
Title
Effects of Zn2+ and Ga3+ doping on the quantum yield of cluster-derived InP quantum dots
Published Date
Nov 19, 2019
Volume
151
Issue
19
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