Self-Heating in 40 nm SOI MOSFETs on High Resistivity, Trap-Rich Substrates
Abstract
Closely spaced n-channel MOSFETs have been used to compare the self-heating in nominally identical devices fabricated on conventional and high resistivity, trap-rich silicon-on-insulator (SOI) substrates. One of the MOSFETs operates above threshold and in saturation to heat the active silicon, while the other is biased into the sub-threshold regime and operates as a local thermometer. The trap-rich layer in the high resistivity substrates...
Paper Details
Title
Self-Heating in 40 nm SOI MOSFETs on High Resistivity, Trap-Rich Substrates
Published Date
Jan 1, 2020
Volume
19
Pages
42 - 46
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