Reduction of Slow Trap Density in Al2O3/GeO x N y /n-Ge MOS Interfaces by PPN-PPO Process

The realization of high-k/IL/Ge MOS interfaces with thin equivalent oxide thickness (EOT), low interface state density (Dit), and high reliability is strongly needed for realizing Ge metal-oxide-semiconductor field-effect transistors (MOSFETs). In this article, we examine the properties of the slow trap areal density (Nst) and Dit in Al ₂ O Read more