Growth and Properties of Intentionally Carbon‐Doped GaN Layers
Abstract
Carbon‐doping of GaN layers with thickness in the mm‐range is performed by hydride vapor phase epitaxy. Characterization by optical and electrical measurements reveals semi‐insulating behavior with a maximum of specific resistivity of 2 × 10 10 Ω cm at room temperature found for a carbon concentration of 8.8 × 10 18 cm −3 . For higher carbon levels up to 3.5 × 10 19 cm −3 , a slight increase of the conductivity is observed and related to...
Paper Details
Title
Growth and Properties of Intentionally Carbon‐Doped GaN Layers
Published Date
Oct 22, 2019
Volume
55
Issue
2
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