Numerical Analysis of Dark Currents in T2SL nBn Detector Grown by MBE on GaAs Substrate
Published: Oct 9, 2019
Abstract
The paper presents the numerical analysis of the performance of the nBn type-II superlattice barrier detector operated at 230 K. Results of theoretical predictions were compared to the experimental data for the nBn detector composed of AlAs0.15Sb0.85 barrier and InAs (5.096 nm)/InAs0.62Sb0.38 (1.94 nm) superlattice absorber and contact layer. Detector structure was grown on GaAs substrate using molecular beam epitaxy. To determine the position...
Paper Details
Title
Numerical Analysis of Dark Currents in T2SL nBn Detector Grown by MBE on GaAs Substrate
Published Date
Oct 9, 2019
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