Numerical analysis and optimization of gas flow and impurity control in directional solidification multi-crystalline Si

In order to study the mechanisms of gas flow and impurity transport in an industrial directional solidification furnace for producing multi-crystalline silicon (mc-Si), a 3D global modeling, including argon flow, thermal conduction, thermal radiation, chemical reaction, and mass transfer was established. Simulation results show that the backflow at crucible outlet near the midcourt plane is mainly attributed to buoyancy, which will induce SiO...