Influence of silicon melt convection on interface instability in large-size silicon carbide solution growth
Abstract
The interface instability in large-size silicon carbide solution growth has been investigated with a focus on the influence of silicon solution convection. Indications have shown that solution convection produces a substantial effect on the instability of the growth interface. As the SiC size increases, the instability becomes more evident. Therefore, improved solution convection is required for growing large-sized silicon carbide ingots by the...
Paper Details
Title
Influence of silicon melt convection on interface instability in large-size silicon carbide solution growth
Published Date
Dec 1, 2019
Journal
Volume
527
Pages
125248 - 125248
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