Strain stabilization of far from equilibrium GaAsBi films

GaAs1−xBix was grown on GaAs and InGaAs underlayers to determine the effect of global strain on bismuth (Bi) incorporation. Reducing compressive strain aids in Bi incorporation and results in higher Bi content films by preventing Ga-Bi surface droplet formation. A maximum Bi fraction of x = 0.088 was achieved in a 100 nm film on an In0.105GaAs buffer layer, a 24% relative improvement compared to layers grown on GaAs. Increasing Bi flux further...