Type-II superlattice photodetectors versus HgCdTe photodiodes

The development of the HgCdTe alloy as the most important intrinsic semiconductor for infrared (IR) technology is well established and recognized. In spite of the achievements in material and device quality, the drawbacks still exist due to bulk and surface instability, lower yields and higher costs particularly in fabrication of long wavelength infrared arrays. The difficulties with this material encouraged to research on other compounds to...