Mask-less Patterning of Gallium-irradiated Superconducting Silicon Using Focused Ion Beam
Abstract
A direct patterning technique of gallium-irradiated superconducting silicon has been established by focused gallium-ion beam without any mask-based lithography process. The electrical transport measurements for line and square shaped patterns of gallium-irradiated silicon were carried out under self-field and magnetic field up to 7 T. Sharp superconducting transitions were observed in both patterns at temperature of 7 K. The line pattern...
Paper Details
Title
Mask-less Patterning of Gallium-irradiated Superconducting Silicon Using Focused Ion Beam
Published Date
Aug 25, 2019
Journal
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