Trap parameters in the infrared InAsSb absorber found by capacitance and noise measurements

We reported experimentally determined trap parameters for the narrow-gap InAs1−x Sb x material with the ternary composition x = 0.18. The deep level transient spectroscopy supported by the low frequency noise spectroscopy were used to study traps in the mid-wavelength infrared (IR) photodetector with the InAs1−x Sb x absorber. The trap levels within the bandgap, theirs capture cross-sections and trap concentration were found. Experimentally...