AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment

To realize the full spectrum of advantages that the III‐nitride materials system offers, the demonstration of p‐channel III‐nitride‐based devices is valuable. The first p‐type field‐effect transistor (pFET) based on an AlGaN/GaN superlattice (SL), grown using metal–organic chemical vapor deposition (MOCVD), is reported. Magnesium is used as the p‐type dopant. A sheet resistance of 11.6 kΩ □ −1 and a contact resistance of 14.9 Ω mm are determined...