Large magnetization modulation in ZnO-based memory devices with embedded graphene quantum dots

Volume: 21, Issue: 29, Pages: 16047 - 16054
Published: Jan 1, 2019
Abstract
Large magnetization modulation up to 500% is achieved in ZnO-based memory device under applied biases of only 0.23/−0.20 V through embedding graphene quantum...
Paper Details
Title
Large magnetization modulation in ZnO-based memory devices with embedded graphene quantum dots
Published Date
Jan 1, 2019
Volume
21
Issue
29
Pages
16047 - 16054
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