Direct band-gap crossover in epitaxial monolayer boron nitride

Volume: 10, Issue: 1
Published: Jun 14, 2019
Abstract
Hexagonal boron nitride is a large band-gap insulating material which complements the electronic and optical properties of graphene and the transition metal dichalcogenides. However, the intrinsic optical properties of monolayer boron nitride remain largely unexplored. In particular, the theoretically expected crossover to a direct-gap in the limit of the single monolayer is presently not confirmed experimentally. Here, in contrast to the...
Paper Details
Title
Direct band-gap crossover in epitaxial monolayer boron nitride
Published Date
Jun 14, 2019
Volume
10
Issue
1
Citation AnalysisPro
  • Scinapse’s Top 10 Citation Journals & Affiliations graph reveals the quality and authenticity of citations received by a paper.
  • Discover whether citations have been inflated due to self-citations, or if citations include institutional bias.