H/F‐Substitution‐Induced Homochirality for Designing High‐T_c Molecular Perovskite Ferroelectrics

A ferroelectric with a high phase‐transition temperature ( T c ) is an indispensable condition for practical applications. Over the past decades, both strain engineering and the isotope effect have been found to effectively improve the T c within ferroelectric material systems. However, the former strategy seems to prefer working in inorganic ferroelectric thin films, while the latter is also limited to some certain systems, such as...