Intermittency-induced criticality in the random telegraph noise of nanoscale UTBB FD-SOI MOSFETs

Volume: 216, Pages: 111027 - 111027
Published: Aug 15, 2019
Abstract
null null The drain current in nanoscale fully depleted ultra-thin body and buried oxide n-MOSFETs is studied in terms of critical dynamics. The time series formed by the measured current through the channel of the MOSFET, appears to have the form of random telegraph noise (RTN). This timeseries is analyzed by the Method of Critical Fluctuation (MCF). Its dynamics are compatible with critical intermittency. According to the quantitative analysis...
Paper Details
Title
Intermittency-induced criticality in the random telegraph noise of nanoscale UTBB FD-SOI MOSFETs
Published Date
Aug 15, 2019
Volume
216
Pages
111027 - 111027
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