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Intermittency-induced criticality in the random telegraph noise of nanoscale UTBB FD-SOI MOSFETs

Published on Aug 15, 2019in Microelectronic Engineering1.654
· DOI :10.1016/J.MEE.2019.111027
Yiannis Contoyiannis16
Estimated H-index: 16
(UWest: University of the West),
Y. Contoyiannis1
Estimated H-index: 1
(UWest: University of the West)
+ 3 AuthorsChristoforos G. Theodorou10
Estimated H-index: 10
(LAHC: Los Angeles Harbor College)
Abstract
Abstract The drain current in nanoscale fully depleted ultra-thin body and buried oxide n-MOSFETs is studied in terms of critical dynamics. The time series formed by the measured current through the channel of the MOSFET, appears to have the form of random telegraph noise (RTN). This timeseries is analyzed by the Method of Critical Fluctuation (MCF). Its dynamics are compatible with critical intermittency. According to the quantitative analysis performed, the current-value distributions are compatible with the spontaneous symmetry breaking phenomenon; in addition, it also carries information of criticality according to the corresponding power law. Finally, MCF analysis identified traces of tri-critical dynamics.
  • References (22)
  • Citations (2)
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References22
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#1Stelios M. Potirakis (UWest: University of the West)H-Index: 4
#1Stelios M. Potirakis (UWest: University of the West)H-Index: 16
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Abstract The method of critical fluctuations (MCF) is a time series analysis method which provides a way of both identifying the critical state and the departure from it. Its application to the ground-based ultra-low frequency (ULF) magnetic field fluctuations observed prior to the very strong earthquakes (EQs) of magnitudes M W = 6 . 2 , M W = 6 . 0 and M W = 7 . 0 which sequentially took place within a two days period (April 14–15, 2016) in Southwest Japan under the city of Kumamoto reveals wh...
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Low frequency noise in nanoscale fully depleted ultra-thin body and buried oxide n-MOSFETs is not as random (stochastic) as it appears to be. The fluctuation of the drain current in such nano-devices, under certain bias conditions, exhibits complex random telegraph noise (RTN) that is usually observed in chaotic systems. Indeed, the deterministic chaotic nature of this noise-like variation is confirmed by means of the combined calculation of established nonlinear dynamics metrics. Specifically, ...
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Abstract Random Telegraph Noise (RTN) has been studied in Ultra-Thin Fully-Depleted Silicon-On-Insulator transistors. A modified Time Lag Plot algorithm has been used to identify devices with a single active trap. The physical characteristics of the trap have been extracted based on Shockley–Read–Hall models, revealing the possible trends of capture and emission times of the trap according to its physical and energetic position. The effect of the temperature on the characteristic times has been ...
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An overview is given on the possibilities of using generation-recombination (GR) noise as a tool for defect spectroscopy in semiconductor materials and devices. The method is illustrated by n-channel MOSFETs fabricated on silicon-on-insulator (SOI) substrates with an ultra-thin buried oxide (UTBOX). As will be shown, the use of fully depleted (FD) UTBOX devices offers some unique opportunities and challenges. In the first instance, one can apply the standard GR noise spectroscopy in function of ...
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