Intermittency-induced criticality in the random telegraph noise of nanoscale UTBB FD-SOI MOSFETs

Published on Aug 15, 2019in Microelectronic Engineering1.654
· DOI :10.1016/J.MEE.2019.111027
Yiannis Contoyiannis16
Estimated H-index: 16
(UWest: University of the West),
Y. Contoyiannis1
Estimated H-index: 1
(UWest: University of the West)
+ 3 AuthorsChristoforos G. Theodorou10
Estimated H-index: 10
(LAHC: Los Angeles Harbor College)
Abstract The drain current in nanoscale fully depleted ultra-thin body and buried oxide n-MOSFETs is studied in terms of critical dynamics. The time series formed by the measured current through the channel of the MOSFET, appears to have the form of random telegraph noise (RTN). This timeseries is analyzed by the Method of Critical Fluctuation (MCF). Its dynamics are compatible with critical intermittency. According to the quantitative analysis performed, the current-value distributions are compatible with the spontaneous symmetry breaking phenomenon; in addition, it also carries information of criticality according to the corresponding power law. Finally, MCF analysis identified traces of tri-critical dynamics.
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