Altering the Schottky Barrier Height and Conductance by Using Metal Nanoparticles in Carbon Nanotubes-Based Devices

In this paper, we propose a novel technique to overcome the conductance limitation in metal contacted single-walled carbon nanotubes (SWNTs)-based devices using metal nanoparticles (MNPs). Schottky barrier (SB) height at metal-SWNTs contact is believed to be the major contributor for this conductance limitation. Metal contacts with SWNTs are fabricated on a thermally grown SiO _{Read more}