Resistive random-access memory with an a-Si/SiNx double-layer
Abstract
Resistive random-access memory (RRAM) with a Ni/SiNx/a-Si/p+-Si structure is presented. In contrast to RRAM devices based on high-k materials, the proposed Si-based device is more attractive and promising because the SiNx and a-Si layers have full compatibility with conventional complementary metal-oxidesemiconductor technology. The proposed device is compared to a control device with a single layer of SiNx. A conduction path containing Si...
Paper Details
Title
Resistive random-access memory with an a-Si/SiNx double-layer
Published Date
Aug 1, 2019
Journal
Volume
158
Pages
64 - 69
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