Vertical Tunnel Field-Effect Transistor with Polysilicon Layer

In this paper, a novel structure of tunnel field-effect transistors (TFETs) is proposed. The proposed device has an intrinsic polysilicon layer located in the overlap region between the source and the gate, which can increase the tunneling area and overcome the low ON-current drawback of the conventional TFET. The advantages of the proposed device are proven by using technology computeraided design (TCAD) simulation. It exhibits more than 50...