Time-Resolved Spectroscopy of InGaN

We have used time-resolved photoluminescence (PL), with 400 nm (3.1 eV) excitation, to examine In x Ga 1−x N/GaN light-emitting diodes (LEDs) before the final stages of processing at room temperature. We have found dramatic differences in the time-resolved kinetics between dim, bright and super bright LED devices. The lifetime of the emission for dim LEDs is quite short, 110 ± 20 ps at photoluminescence (PL) maximum, and the kinetics are not...