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doi.org/10.1017/s1431927618016082

Resistive Switching Studies of ReRAM Devices by In-Situ TEM

..., Albert Cornet
19
Microscopy and Microanalysis2.80
Volume: 25, Issue: S1, Pages: 71 - 72
Published: Feb 1, 2019
Abstract
Journal Article Resistive Switching Studies of ReRAM Devices by In-Situ TEM Get access Gemma Martín, Gemma Martín MIND/IN2UB, Departament d'Enginyeria Electrònica i Biomèdica, Universitat de Barcelona, Martí i Franquès 1, 08028 Barcelona, Spain Search for other works by this author on: Oxford Academic Google Scholar Mireia B González, Mireia B González Institut de Microelectrònica de Barcelona, IMB-CNM (CSIC), Campus UAB, 08193 Bellaterra, Spain...
Paper Fields
Paper Details
Title
Resistive Switching Studies of ReRAM Devices by In-Situ TEM
DOI
doi.org/10.1017/s1431927618016082
Published Date
Feb 1, 2019
Journal
Microscopy and Microanalysis
Volume
25
Issue
S1
Pages
71 - 72
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