Mechanism for generating interstitial atoms by thermal stress during silicon crystal growth
Volume: 65, Issue: 1, Pages: 36 - 46
Published: Feb 1, 2019
Abstract
It has been known that, in growing silicon from melts, vacancies (Vs) predominantly exist in crystals obtained by high-rate growth, while interstitial atoms (Is) predominantly exist in crystals obtained by low-rate growth. To reveal the cause, the temperature distributions in growing crystal surfaces were measured. From this result, it was presumed that the high-rate growth causes a small temperature gradient between the growth interface and the...
Paper Details
Title
Mechanism for generating interstitial atoms by thermal stress during silicon crystal growth
Published Date
Feb 1, 2019
Volume
65
Issue
1
Pages
36 - 46
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