Pressure-induced formation of bulk Ge-Sn compounds with high concentration of Sn

Bulk Ge-Sn chemical compounds have rarely been synthesized at ambient pressure, due to the low solubility of Sn in Ge. Atomic and electronic structures can be significantly changed by pressure, which holds the promise to synthesize bulk Sn-Ge compounds. Here, we identify the formation of three stoichiometric Ge-Sn compounds (Ge2Sn, Ge3Sn2 and Ge2Sn3) under high pressure, using the CALYPSO structure prediction method in combination with...