Improvement of the Al2O3/NO2/H-diamond MOS FET by using Au gate metal and its analysis

By using Au as the gate metal contact, performance of NO2-doped H-diamond field effect transistor (FET) has been improved. We fabricated and compared Al2O3 layer deposited, NO2-doped H-diamond FETs with Au, Al and Ti gate metals, respectively. Among them, FET with Au gate metal showed the highest drain current of −61.76 mA/mm, where drain current of FET with Al and Ti gate metals were respectively −42.89 and −39.97 mA/mm. Further, NO2-doped...