Loss Characterization and Analysis of High Voltage E-mode GaN HEMT in Soft-switching Application

Application of wide band gap (WBG) devices are getting a sharp rise in the recent power electronics sector, due to their superior performance when compared to silicon. Even though GaN devices provide a promising efficiency and power density numbers, but high frequency operation limits these benefits. This leaves behind a space for the realization of high frequency based soft switching topologies, which in combination with the GaN makes the...