Ambipolar SB-FinFETs: A New Path to Ultra-Compact Sub-10 nm Logic Circuits

Ultracompact sub-10-nm logic gates based on ambipolar characteristics of Schottky-barrier (SB) FinFETs and gate workfunction engineering (WFE) approach are introduced. Novel logic gate designs are proposed using WFE, whereby adjustment of workfunction in the contacts as well as two independently biased FinFET gates leads to an unprecedented degree of freedom for logic functionality that has not been explored before. The use of SB contacts, along...