Origin of Low-Frequency Noise in Triple-Gate Junctionless n-MOSFETs

Volume: 65, Issue: 12, Pages: 5481 - 5486
Published: Dec 1, 2018
Abstract
The low-frequency noise in triple-gate junctionless n-MOSFETs, with channel lengths varying from 95 to 25 nm and operating in the bulk and accumulation modes, is investigated by measurements in the frequency and time domains. The experimental drain current noise spectra present 1/f and Lorentzian-type behavior components. The noise spectra in the time domain reveal that the Lorentzian-type behavior components are due to the capture and emission...
Paper Details
Title
Origin of Low-Frequency Noise in Triple-Gate Junctionless n-MOSFETs
Published Date
Dec 1, 2018
Volume
65
Issue
12
Pages
5481 - 5486
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