Nanostructured epitaxial graphene for ultra-broadband optoelectronic detectors (Conference Presentation)

Atomically thin materials like semimetallic graphene and semiconducting transition metal dichalcogenides (TMDs) are an ideal platform for ultra-thin optoelectronic devices due to their direct bandgap (for monolayer thickness) and their considerable light absorption. For devices based on semiconducting TMDs, light detection occurs by optical excitation of charge carriers above the bandgap. For gapless graphene, light absorption causes a large...