In situ study of porous silicon thin films thermal oxidation by pulsed laser photoacoustics

Volume: 33, Issue: 8, Pages: 085001 - 085001
Published: Jun 29, 2018
Abstract
Passivation is of remarkable importance for porous silicon (PSi) applications to guarantee the chemical stability of its high surface area through time. Thermal oxidation is one of the most common methods to passivate the surface of PSi. In order to better understand the oxidation process, here we performed an in situ study by using pulsed laser photoacoustics. During the thermal oxidation, the photoacoustical signal was measured each 1 °C from...
Paper Details
Title
In situ study of porous silicon thin films thermal oxidation by pulsed laser photoacoustics
Published Date
Jun 29, 2018
Volume
33
Issue
8
Pages
085001 - 085001
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