Waveguide Butt-Joint Germanium Photodetector with Lateral PIN Structure for 1600nm Wavelengths Receiving

We report good responsivity at the wavelength of 1600nm in a Ge photodetector which had lateral p-i-n structure and butt-joint coupling structure based on conventional normal complementary metal oxide semiconductor processes. We experimentally verified the responsivity of 0.82A/W and 0.71A/W on the best and the worst polarizations, respectively. The butt joint lateral p-i-n structure is found to be polarization independent as compared with...