Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives
Volume: 64, Issue: 3, Pages: 63 - 74
Published: Sep 1, 2018
Abstract
Recent progress in ammonothermal technology of bulk GaN growth in basic environment is presented and discussed in this paper. This method enables growth of two-inch in diameter crystals of outstanding structural properties, with radius of curvature above tens of meters and low threading dislocation density of the order of 5 × 104 cm−2. Crystals with different types of conductivity, n-type with free electron concentration up to 1019 cm−3, p-type...
Paper Details
Title
Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives
Published Date
Sep 1, 2018
Volume
64
Issue
3
Pages
63 - 74
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