High-performance InGaAs/InP photodiodes on silicon using low-temperature wafer-bonding
Published: Jan 1, 2018
Abstract
We demonstrate back-illuminated III-V modified uni-traveling carrier photodiodes on silicon using SU-8 as the bonding layer. Responsivity at 1620nm, bandwidth, output RF power and OIP3 are 0.8A/W, 18GHz, 4dBm and 22.5dBm at 9GHz,...
Paper Details
Title
High-performance InGaAs/InP photodiodes on silicon using low-temperature wafer-bonding
Published Date
Jan 1, 2018
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