Effect of Si₃ N₄ -Mediated Inversion Layer on the Electroluminescence Properties of Silicon Nanocrystal Superlattices

The achievement of an efficient all‐Si electrically‐pumped light emitter is a major milestone in present optoelectronics still to be fulfilled. Silicon nanocrystals (Si NCs) are an attractive material which, by means of the quantum confinement effect, allow attaining engineered bandgap visible emission from Si by controlling the NC size. In this work, SiO 2 ‐embedded Si NCs are employed as an active layer within a light‐emitting device...