Low-voltage-driven Pt/BiFeO3/DyScO3/p-Si-based metal–ferroelectric–insulator–semiconductor device for non-volatile memory

In recent years, ferroelectric random access memory has drawn considerable attention as promising replacement to both dynamic random access memory and flash memory. Specifically in metal–ferroelectric–insulator–semiconductor (MFIS)-based structures, bi-stable polarization of ferroelectric gate even in absence of power holds the resistance state of semiconductor-drain channel between two logic states and offers additional features of...