Ultra-compact sub-10nm logic circuits based on ambipolar SB-FinFETs

Novel ultra-compact sub-10nm XOR, NOR and NAND CMOS logic circuits based on ambipolar characteristics of Schottky-Barrier (SB) FinFET devices and gate metal workfunction engineering are introduced. Use of SB source and drain contacts, high-k gate dielectrics and ultra-thin body bestows extreme short-channel immunity to the proposed FinFETs with ambipolar current-voltage characteristics. Thus, the main physical parameter left for practical device...