Original paper
Extended short-wavelength infrared nBn photodetectors based on type-II InAs/AlSb/GaSb superlattices with an AlAsSb/GaSb superlattice barrier
Abstract
Extended short-wavelength infrared nBn photodetectors based on type-II InAs/AlSb/GaSb superlattices on GaSb substrate have been demonstrated. An AlAs0.10Sb0.90/GaSb H-structure superlattice design was used as the large-bandgap electron-barrier in these photodetectors. The photodetector is designed to have a 100% cut-off wavelength of ∼2.8 μm at 300 K. The photodetector exhibited a room-temperature (300 K) peak responsivity of 0.65 A/W at 1.9 μm,...
Paper Details
Title
Extended short-wavelength infrared nBn photodetectors based on type-II InAs/AlSb/GaSb superlattices with an AlAsSb/GaSb superlattice barrier
Published Date
Mar 6, 2017
Journal
Volume
110
Issue
10
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Notes
History