Analytical Drain Current Compact Model in the Depletion Operation Region of Short-Channel Triple-Gate Junctionless Transistors
Abstract
A new charge-based analytical compact model for the drain current of junctionless (JL) triple-gate MOSFETs is presented, which includes the short-channel effects, the saturation velocity overshoot, the series resistance, and the mobility degradation effects. The proposed model consists of a single analytical equation that covers the depletion operation region in which the bulk conduction determines the drain current. The model is supported by...
Paper Details
Title
Analytical Drain Current Compact Model in the Depletion Operation Region of Short-Channel Triple-Gate Junctionless Transistors
Published Date
Jan 1, 2017
Volume
64
Issue
1
Pages
66 - 72
Citation AnalysisPro
You’ll need to upgrade your plan to Pro
Looking to understand the true influence of a researcher’s work across journals & affiliations?
- Scinapse’s Top 10 Citation Journals & Affiliations graph reveals the quality and authenticity of citations received by a paper.
- Discover whether citations have been inflated due to self-citations, or if citations include institutional bias.
Notes
History