D-Band Common-Base Amplifiers With Gain Boosting and Interstage Self-Matching in 0.18- $\mu\text{m}$ SiGe HBT Technology

Volume: 64, Issue: 3, Pages: 254 - 258
Published: Mar 1, 2017
Abstract
This paper presents two D-band amplifiers fabricated in a 0.18- null null null \mu\text{m}null null SiGe heterojunction bipolar transistor process. A single-ended amplifier employs a five-stage common-base topology, and a differential amplifier combines two of the single-ended chains. To overcome the limited available gain of the given technology at D-band, a gain-boosting technique based on positive feedback is adopted for each gain cell. In...
Paper Details
Title
D-Band Common-Base Amplifiers With Gain Boosting and Interstage Self-Matching in 0.18- $\mu\text{m}$ SiGe HBT Technology
Published Date
Mar 1, 2017
Volume
64
Issue
3
Pages
254 - 258
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