Electrostatic RF MEMS switch working on 500–750 GHz

This work presents the design, simulation, and fabrication of a 500-750 GHz RF MEMS switch. The switch is designed on a high-resistivity silicon substrate using CPW. Electrostatic force generated by DC bias can actuate the beam to realize conduction or isolation between input and output CPW. HFSS simulations demonstrate that the switch's isolation is 14 dB at 620 GHz and 12 dB at 750 GHz in the OFF state. In the ON state, the insertion loss is...