Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs

This paper studies the amplitude of random telegraph noise (RTN) caused by a single trap in the silicon film of ultra-thin buried oxide (UTBOX) silicon-on-insulator (SOI) devices. The film-defect-related RTN was identified and analyzed by low frequency noise measurement and time domain measurement. Emphasis is on the relative amplitude ΔID/ID, which is studied in the function of the front-gate, the back-gate and the drain-to-source biases....