Trimethylamine Borane: A New Single-Source Precursor for Monolayer h-BN Single Crystals and h-BCN Thin Films

Volume: 28, Issue: 7, Pages: 2180 - 2190
Published: Mar 18, 2016
Abstract
Due to their exceptional chemical and thermal stabilities as well as electrically insulating property, atomically thin hexagonal boron nitride (h-BN) films have been identified as a promising class of dielectric substrate and encapsulation material for high-performance two-dimensional (2D) heterostructure devices. Herein, we report a facile chemical vapor deposition synthesis of large-area atomically thin h-BN including monolayer single crystals...
Paper Details
Title
Trimethylamine Borane: A New Single-Source Precursor for Monolayer h-BN Single Crystals and h-BCN Thin Films
Published Date
Mar 18, 2016
Volume
28
Issue
7
Pages
2180 - 2190
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