A Three-Terminal Approach to Developing Spin-Torque Written Magnetic Random Access Memory Cells

Using a self-aligned fabrication process together with multiple-step aligned electron beam lithography, we have developed a nanopillar structure where a third contact can be made to any point within a thin-film multilayer stack. This substantially enhances the versatility of the device by providing the means to apply independent electrical biases to two separate parts of the structure. Here, we demonstrate a joint magnetic spin-valve (SV)/tunnel...